Published March 13, 2025
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Defect engineering and carrier dynamics in gallium-doped zinc oxide nanowires for light-emitting applications

Creators

  • 1. Department of Physics, Bangladesh University of Engineering and Technology, Dhaka-1000, Bangladesh
  • 2. Department of Materials and Metallurgical Engineering, Bangladesh University of Engineering and Technology, Dhaka-1000, Bangladesh
  • 3. School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, NSW 2007, Australia
  • 4. University of Technology, Sydney

Description

The high doping levels of Ga in ZnO nanowires grown in an oxygen-rich environment quench the V Zn -related green luminescence and lead to the formation of Ga Zn V Zn intraband states responsible for intense orange luminescence.
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